N-Ch MOSFET SO-8 BWL 40V 3.3mohm @10V -

SI4154DY-T1-GE3 N-Ch MOSFET SO-8 BWL 40V 3.3mohm @10V -
Vishay

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.0039 O
Package Type:
SOIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
36 A
Pin Count:
8
RoHs Compliant
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This is N-Ch MOSFET SO-8 BWL 40V 3.3mohm @10V - manufactured by Vishay. The manufacturer part number is SI4154DY-T1-GE3. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.0039 o maximum drain source resistance. The package is a sort of soic. It consists of 1 elements per chip. While 36 a of maximum continuous drain current. It contains 8 pins.

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Datasheet(Technical Reference)

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