P-Ch MOSFET SO-8 30V 13mohm @ 10V- Lead(

SI4825DDY-T1-GE3 P-Ch MOSFET SO-8 30V 13mohm @ 10V- Lead(
Vishay

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
P
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.0205 O
Package Type:
SO-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
14.9 A
Pin Count:
8
RoHs Compliant
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This is P-Ch MOSFET SO-8 30V 13mohm @ 10V- Lead( manufactured by Vishay. The manufacturer part number is SI4825DDY-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.0205 o maximum drain source resistance. The package is a sort of so-8. It consists of 1 elements per chip. While 14.9 a of maximum continuous drain current. It contains 8 pins.

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Datasheet(Technical Reference)

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