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This is MOSFET manufactured by ROHM. The manufacturer part number is QH8JA1TCR. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 10.2 nc @ 4.5 v (n channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.5 w maximum power dissipation. The product qh8ja1, is a highly preferred choice for users. It features a maximum gate source voltage of ±10 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.8mm. Furthermore, the product is 2.5mm wide. Its accurate length is 3.1mm. It provides up to 77 mω maximum drain source resistance. The package is a sort of tsmt. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 5 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.5v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
For more information please check the datasheets.
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