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This is 30V Nch+Nch Middle Power MOSFET manufactured by ROHM. The manufacturer part number is HP8S36TB. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 4.8 nc @ 4.5 v (n channel), 47 nc @ 4.5 v (n channel). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 22 w, 29 w maximum power dissipation. The product hp8s36, is a highly preferred choice for users. It features a maximum gate source voltage of ±128 v, ±20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 1.1mm. Furthermore, the product is 5.8mm wide. Its accurate length is 5mm. It provides up to 13.3 mω maximum drain source resistance. The package is a sort of hsop8. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 27 a, 80 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.3v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
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