Category:
Power MOSFET
Dimensions:
10.4 x 9.2 x 4.7mm
Maximum Continuous Drain Current:
4 A
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
250 pF @ 25 V
Length:
10.4mm
Pin Count:
3
Typical Turn-Off Delay Time:
55 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
58 W
Series:
R6004ENJ
Maximum Gate Source Voltage:
±30 V
Height:
4.7mm
Typical Turn-On Delay Time:
22 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
980 mΩ
