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This is N-Chanel 25 V (D-S) MOSFET PowerPAK 1212 manufactured by Vishay Siliconix. The manufacturer part number is SiSS02DN-T1-GE3. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.15mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of 1212. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 55 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.15mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 65.7 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -12 v, +16 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 1 mω maximum drain source resistance.
For more information please check the datasheets.
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