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This is N-Channel MOSFET 9 A 600 V R6009END3 3-Pin DPAK manufactured by ROHM. The manufacturer part number is R6009END3TL1. While 9 a of maximum continuous drain current. Furthermore, the product is 6.4mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-252. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 94 w maximum power dissipation. The product r6009end3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 530 mω maximum drain source resistance.
For more information please check the datasheets.
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