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This is P-Channel 40-V (D-S) MOSFET SOT-23 1G manufactured by Vishay Siliconix. The manufacturer part number is Si2319DDS-T1-GE3. While 3.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 3.04mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 1.7 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.02mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 100 mω maximum drain source resistance.
For more information please check the datasheets.
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