Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 11.3mm
Maximum Continuous Drain Current:
21 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
180 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
41 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1757 pF @ 100 V
Length:
10.67mm
Pin Count:
3 + Tab
Forward Transconductance:
16S
Typical Turn-Off Delay Time:
86 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
208 W
Series:
EL-Series
Maximum Gate Source Voltage:
±30 V
Height:
11.3mm
Typical Turn-On Delay Time:
27 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
