N-Channel 30-V (D-S) MOSFET with Schottk
Product Information
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38.5 nC @ 10 V
Channel Type:
N
Length:
5.99mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Series:
TrenchFET
Maximum Gate Source Voltage:
-16 V, +20 V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.7V
Maximum Drain Source Resistance:
4 mΩ
FET Feature:
Schottky Diode (Body)
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2455 pF @ 15 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:
32A (Ta), 60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRC06
ECCN:
EAR99
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FAQs
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You can order Vishay Siliconix brand products with SIRC06DP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel 30-V (D-S) MOSFET with Schottk. You can also check on our website or by contacting our customer support team for further order details on N-Channel 30-V (D-S) MOSFET with Schottk.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16944579 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16944579.
Yes. We ship SIRC06DP-T1-GE3 Internationally to many countries around the world.
This is N-Channel 30-V (D-S) MOSFET with Schottk manufactured by Vishay Siliconix. The manufacturer part number is SIRC06DP-T1-GE3. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 1v of maximum gate threshold voltage. The package is a sort of powerpak so-8. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 38.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 0.7v . It provides up to 4 mω maximum drain source resistance. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 2.7mohm @ 15a, 10v. The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 50w (tc). The product's input capacitance at maximum includes 2455 pf @ 15 v. It has a long 14 weeks standard lead time. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The continuous current drain at 25°C is 32a (ta), 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sirc06, a base product number of the product. The product is designated with the ear99 code number.
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