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This is N-Channel 100-V (D-S) MOSFET PowerPAK SO manufactured by Vishay Siliconix. The manufacturer part number is SiR108DP-T1-RE3. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of so-8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.6v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 27.5 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5.99mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 65.7 w maximum power dissipation. The product trenchfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 10 mω maximum drain source resistance.
For more information please check the datasheets.
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