Nch 40V 80A Power MOSFET

RX1G08CGNC10 Nch 40V 80A Power MOSFET
ROHM

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
RX1G08CGN
Maximum Gate Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
16.3mm
Width:
4.7mm
Length:
10.1mm
Maximum Drain Source Resistance:
5.9 mΩ
Package Type:
TO220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
80 A
Minimum Gate Threshold Voltage:
1V
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is Nch 40V 80A Power MOSFET manufactured by ROHM. The manufacturer part number is RX1G08CGNC10. It has a maximum of 40 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 78 w maximum power dissipation. The product rx1g08cgn, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 16.3mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.1mm. It provides up to 5.9 mω maximum drain source resistance. The package is a sort of to220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 80 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)

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