Category:
Power MOSFET
Dimensions:
6.8 x 6.4 x 2.4mm
Maximum Continuous Drain Current:
9 A
Width:
6.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
7V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 15 V
Channel Type:
N
Typical Input Capacitance @ Vds:
645 pF @ 100 V
Length:
6.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
R6009JND3
Maximum Gate Source Voltage:
±30 V
Height:
2.4mm
Typical Turn-On Delay Time:
20 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.7V
Maximum Drain Source Resistance:
580 mΩ
