Nch 60V 5.5A Power MOSFET

RF4L055GNTCR Nch 60V 5.5A Power MOSFET
ROHM

Product Information

Maximum Continuous Drain Current:
5.5 A
Width:
2.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.7V
Package Type:
HUML2020L
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.8 nC @ 10 V
Channel Type:
N
Length:
2.1mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Series:
RF4L055GN
Maximum Gate Source Voltage:
±20 V
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
43 mΩ
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This is Nch 60V 5.5A Power MOSFET manufactured by ROHM. The manufacturer part number is RF4L055GNTCR. While 5.5 a of maximum continuous drain current. Furthermore, the product is 2.1mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of huml2020l. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.8 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 2.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. The product rf4l055gn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 0.6mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 43 mω maximum drain source resistance.

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Datasheet(Technical Reference)

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