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This is 4V Drive Nch MOSFET manufactured by ROHM. The manufacturer part number is RSJ650N10TL. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 260 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 100 w maximum power dissipation. The product rsj650n10, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 4.5mm. Furthermore, the product is 9mm wide. Its accurate length is 10.1mm. It provides up to 9.8 mω maximum drain source resistance. The package is a sort of to-263. It consists of 1 elements per chip. While 65 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. Its forward diode voltage is 1.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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