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This is 30V Nch / Nch+SBD Power MOSFET manufactured by ROHM. The manufacturer part number is SH8K10SGZETB. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8.4 nc @ 5 v (tr1), 8.9 nc @ 5 v (tr2). The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product sh8k10s, is a highly preferred choice for users. It features a maximum gate source voltage of tr2) v, ±20 (tr1. The product carries tr2)v, 2.5 (tr1 of maximum gate threshold voltage. In addition, the height is 1.6mm. Furthermore, the product is 4.05mm wide. Its accurate length is 5.2mm. It provides up to 19.6 mω maximum drain source resistance. The package is a sort of sop. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 7 (tr1) a, 8.5 (tr2) a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes tr2)v, 1 (tr1. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins.
For more information please check the datasheets.
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