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This is Nch 190V 10A Power MOSFET manufactured by ROHM. The manufacturer part number is RD3S100CNTL1. While 10 a of maximum continuous drain current. Furthermore, the product is 6.4mm wide. The product offers single transistor configuration. It has a maximum of 190 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 52 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 85 w maximum power dissipation. The product rd3s100cn, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.5v . It provides up to 182 mω maximum drain source resistance.
For more information please check the datasheets.
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