Category:
Power MOSFET
Dimensions:
10.1 x 4.7 x 16.3mm
Maximum Continuous Drain Current:
30 A
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
56 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2350 pF @ 25 V
Length:
10.1mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
307 W
Series:
R6530KNX1
Maximum Gate Source Voltage:
±30 V
Height:
16.3mm
Typical Turn-On Delay Time:
40 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
140 mΩ
