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This is Nch 600V 20A Power MOSFET manufactured by ROHM. The manufacturer part number is R6020ENZC8. It has a maximum of 600 v drain source voltage. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 120 w maximum power dissipation. The product r6020enz, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 26.7mm. Furthermore, the product is 5.7mm wide. Its accurate length is 15.7mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of to-3pf. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. Its forward diode voltage is 1.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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