This is Pch -30V -80A Power MOSFET manufactured by ROHM. The manufacturer part number is RS1E260ATTB1. While 80 a of maximum continuous drain current. Furthermore, the product is 5.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of hsop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 175 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 40 w maximum power dissipation. The product rs1e260at, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.1 mω maximum drain source resistance.
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This is Pch -30V -80A Power MOSFET manufactured by ROHM. The manufacturer part number is RS1E260ATTB1. While 80 a of maximum continuous drain current. Furthermore, the product is 5.8mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.5v of maximum gate threshold voltage. The package is a sort of hsop. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 175 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 40 w maximum power dissipation. The product rs1e260at, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 3.1 mω maximum drain source resistance.
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