Category:
Power MOSFET
Dimensions:
15.7 x 5.7 x 26.7mm
Maximum Continuous Drain Current:
35 A
Width:
5.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-3PF
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
110 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2600 pF @ 25 V
Length:
15.7mm
Pin Count:
3
Typical Turn-Off Delay Time:
220 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
102 W
Series:
R6535ENZ
Maximum Gate Source Voltage:
±30 V
Height:
26.7mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
110 mΩ
