Vishay SIR690DP-T1-RE3 N-channel MOSFET, 34.4 A, 200 V, 8-Pin SO

SIR690DP-T1-RE3 Vishay  N-channel MOSFET, 34.4 A, 200 V, 8-Pin SO
Vishay

Product Information

Maximum Continuous Drain Current:
34.4 A
Width:
5.26mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31.9 nC @ 10 V
Channel Type:
N
Length:
6.25mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
104 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.12mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
39 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 34.4 A 200 V 8-Pin SO manufactured by Vishay. The manufacturer part number is SIR690DP-T1-RE3. While 34.4 a of maximum continuous drain current. Furthermore, the product is 5.26mm wide. The product offers single transistor configuration. It has a maximum of 200 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of so. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 31.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.25mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 104 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.12mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 39 mω maximum drain source resistance.

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SiR690DP, N-Channel 200V MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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