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This is N-channel MOSFET 15.2 A 200 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC900N20NS3GATMA1. It has a maximum of 200 v drain source voltage. With a typical gate charge at Vgs includes 9 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 62.5 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.1mm. It provides up to 90 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 15.2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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