Infineon IPP12CN10LGXKSA1 N-channel MOSFET, 69 A, 100 V OptiMOS 2, 3-Pin TO-220

IPP12CN10LGXKSA1 Infineon  N-channel MOSFET, 69 A, 100 V OptiMOS 2, 3-Pin TO-220
Infineon

Product Information

Maximum Continuous Drain Current:
69 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
58 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Series:
OptiMOS™ 2
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
15.8 mΩ
RoHs Compliant
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This is N-channel MOSFET 69 A 100 V OptiMOS 2 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP12CN10LGXKSA1. While 69 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 58 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. The product optimos™ 2, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 15.8 mω maximum drain source resistance.

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IPS12CN10L G, IPP12CN10L G, OptiMOS2 Power-Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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