Infineon BSC600N25NS3GATMA1 N-channel MOSFET, 25 A, 250 V OptiMOS 3, 8-Pin TDSON

BSC600N25NS3GATMA1 Infineon  N-channel MOSFET, 25 A, 250 V OptiMOS 3, 8-Pin TDSON
BSC600N25NS3GATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
250 V
Typical Gate Charge @ Vgs:
22 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
OptiMOS™ 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Width:
5.35mm
Length:
6.1mm
Maximum Drain Source Resistance:
60 mΩ
Package Type:
TDSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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This is N-channel MOSFET 25 A 250 V OptiMOS 3 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC600N25NS3GATMA1. It has a maximum of 250 v drain source voltage. With a typical gate charge at Vgs includes 22 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product optimos™ 3, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.1mm. Furthermore, the product is 5.35mm wide. Its accurate length is 6.1mm. It provides up to 60 mω maximum drain source resistance. The package is a sort of tdson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 1.2v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.

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BSC600N25NS3 G OptiMOS 3 Power-Transistor(Technical Reference)

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