Diodes Inc DMP2047UCB4-7 P-channel MOSFET, 4.1 A, 20 V, 4-Pin U-WLB1010

DiodesZetex

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
2.3 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Maximum Gate Source Voltage:
-6 V
Maximum Gate Threshold Voltage:
1.2V
Height:
0.38mm
Width:
1.05mm
Length:
1.05mm
Maximum Drain Source Resistance:
60 mΩ
Package Type:
U-WLB1010
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.1 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is Diodes Inc P-channel MOSFET 4.1 A 20 V 4-Pin U-WLB1010 manufactured by DiodesZetex. The manufacturer part number is DMP2047UCB4-7. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 2.3 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1 w maximum power dissipation. It features a maximum gate source voltage of -6 v. The product carries 1.2v of maximum gate threshold voltage. In addition, the height is 0.38mm. Furthermore, the product is 1.05mm wide. Its accurate length is 1.05mm. It provides up to 60 mω maximum drain source resistance. The package is a sort of u-wlb1010. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 4.1 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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DMP2047UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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