ROHM SCT3160KLGC11 N-channel SiC MOSFET, 17 A, 1200 V, 3-Pin TO-247N

SCT3160KLGC11 ROHM  N-channel SiC MOSFET, 17 A, 1200 V, 3-Pin TO-247N
ROHM

Product Information

Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
42 nC @ 18 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
103 W
Maximum Gate Source Voltage:
22 V
Maximum Gate Threshold Voltage:
5.6V
Height:
21mm
Width:
5mm
Length:
16mm
Minimum Gate Threshold Voltage:
2.7V
Package Type:
TO-247N
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
17 A
Transistor Material:
SiC
Maximum Drain Source Resistance:
240 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel SiC MOSFET 17 A 1200 V 3-Pin TO-247N manufactured by ROHM. The manufacturer part number is SCT3160KLGC11. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 42 nc @ 18 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 103 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product carries 5.6v of maximum gate threshold voltage. In addition, the height is 21mm. Furthermore, the product is 5mm wide. Its accurate length is 16mm. Whereas its minimum gate threshold voltage includes 2.7v. The package is a sort of to-247n. It consists of 1 elements per chip. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It provides up to 240 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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