Dimensions:
6.55 x 3.55 x 1.65mm
Maximum Continuous Drain Current:
6.1 A
Transistor Material:
Si
Width:
3.55mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
300 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.7 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
551 pF @ -30 V
Length:
6.55mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
91.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.8 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.65mm
Typical Turn-On Delay Time:
6.3 ns
Minimum Operating Temperature:
-55 °C
