Infineon BSS159NH6327XTSA2 N-channel MOSFET, 230 mA, 60 V Depletion SIPMOS, 3-Pin SOT-23

BSS159NH6327XTSA2 Infineon  N-channel MOSFET, 230 mA, 60 V Depletion SIPMOS, 3-Pin SOT-23
BSS159NH6327XTSA2
Infineon

Product Information

Maximum Continuous Drain Current:
230 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.4V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.4 nC @ 5 V
Channel Type:
N
Length:
2.9mm
Pin Count:
3
Channel Mode:
Depletion
Mounting Type:
Surface Mount
Maximum Power Dissipation:
360 mW
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8 Ω
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 230 mA 60 V Depletion SIPMOS 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BSS159NH6327XTSA2. While 230 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 2.4v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 1.4 nc @ 5 v. The product is available in [Cannel Type] channel. Its accurate length is 2.9mm. It contains 3 pins. The product carries depletion channel mode. The product is available in surface mount configuration. Provides up to 360 mw maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8 ω maximum drain source resistance.

pdf icon
BSS159N, SIPMOS Small-Signal-Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search BSS159NH6327XTSA2 on website for other similar products.
We accept all major payment methods for all products including ET16910035. Please check your shopping cart at the time of order.
You can order Infineon brand products with BSS159NH6327XTSA2 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BSS159NH6327XTSA2 N-channel MOSFET, 230 mA, 60 V Depletion SIPMOS, 3-Pin SOT-23. You can also check on our website or by contacting our customer support team for further order details on Infineon BSS159NH6327XTSA2 N-channel MOSFET, 230 mA, 60 V Depletion SIPMOS, 3-Pin SOT-23.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16910035 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16910035.
Yes. We ship BSS159NH6327XTSA2 Internationally to many countries around the world.