Toshiba TPN4R303NL N-channel MOSFET, 63 A, 30 V, 8-Pin TSON
Product Information
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
14.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
34 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.3V
Channel Type:
N
Width:
3.1mm
Length:
3.1mm
Maximum Drain Source Resistance:
6.3 mΩ
Package Type:
TSON
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
63 A
Minimum Gate Threshold Voltage:
1.3V
Forward Diode Voltage:
1.2V
Height:
0.85mm
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Single
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Yes. We ship TPN4R303NL Internationally to many countries around the world.
This is N-channel MOSFET 63 A 30 V 8-Pin TSON manufactured by Toshiba. The manufacturer part number is TPN4R303NL. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 14.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 34 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.3v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 3.1mm wide. Its accurate length is 3.1mm. It provides up to 6.3 mω maximum drain source resistance. The package is a sort of tson. It consists of 1 elements per chip. While 63 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.3v. Its forward diode voltage is 1.2v . In addition, the height is 0.85mm. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.
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