MOSFET N-Ch 100V 35A OptiMOS2 DPAK

IPD25CN10NGATMA1 MOSFET N-Ch 100V 35A OptiMOS2 DPAK
Infineon

Product Information

Maximum Continuous Drain Current:
35 A
Width:
7.47mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
23 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
71 W
Series:
OptiMOS™ 2
Maximum Gate Source Voltage:
20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
26 mΩ
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This is MOSFET N-Ch 100V 35A OptiMOS2 DPAK manufactured by Infineon. The manufacturer part number is IPD25CN10NGATMA1. While 35 a of maximum continuous drain current. Furthermore, the product is 7.47mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 23 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 71 w maximum power dissipation. The product optimos™ 2, is a highly preferred choice for users. It features a maximum gate source voltage of 20 v. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 26 mω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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