ON Semiconductor MOSFET

FDP032N08B_F102 ON Semiconductor MOSFET
ON Semiconductor

Product Information

Maximum Continuous Drain Current:
211 A
Transistor Material:
Si
Width:
4.672mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
111 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
263 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.215mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.3 mΩ
RoHs Compliant
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This is MOSFET manufactured by ON Semiconductor. The manufacturer part number is FDP032N08B_F102. While 211 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.672mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 111 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 263 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.215mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.3 mω maximum drain source resistance.

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ESD Control Selection Guide V1(Technical Reference)
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FDP032N08B, N-Channel PowerTrench MOSFET 80V, 211A, 3.3mOhm(Technical Reference)

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