Nexperia BSS138BKW,115 N-channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23

BSS138BKW-115 Nexperia BSS138BKW,115 N-channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23
BSS138BKW,115
Nexperia

Product Information

Maximum Continuous Drain Current:
320 mA
Transistor Material:
Si
Width:
1.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
1.6V
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.48V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.6 nC @ 4.5 V
Channel Type:
N
Length:
3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
310 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.6 Ω
RoHs Compliant
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This is N-channel MOSFET 320 mA 60 V 3-Pin SOT-23 manufactured by Nexperia. The manufacturer part number is BSS138BKW,115. While 320 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 1.6v of maximum gate threshold voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.48v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.6 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 3mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 310 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1.6 ω maximum drain source resistance.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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