Infineon IPD50P03P4L11ATMA1 P-channel MOSFET, 50 A, 30 V OptiMOS P, 3-Pin DPAK

IPD50P03P4L11ATMA1 Infineon  P-channel MOSFET, 50 A, 30 V OptiMOS P, 3-Pin DPAK
IPD50P03P4L11ATMA1
Infineon

Product Information

Maximum Continuous Drain Current:
50 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
42 nC @ 10 V
Channel Type:
P
Length:
6.5mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
58 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-16 V, +5 V
Height:
2.3mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
18 mΩ
Checking for live stock

This is P-channel MOSFET 50 A 30 V OptiMOS P 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD50P03P4L11ATMA1. While 50 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.22mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 42 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 58 w maximum power dissipation. The product optimos p, is a highly preferred choice for users. It features a maximum gate source voltage of -16 v, +5 v. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 18 mω maximum drain source resistance.

pdf icon
IPD50P03P4L-11, OptiMOS-P2 Power-Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

Reviews

  • Be the first to review.


FAQs

Yes. You can also search IPD50P03P4L11ATMA1 on website for other similar products.
We accept all major payment methods for all products including ET16889894. Please check your shopping cart at the time of order.
You can order Infineon brand products with IPD50P03P4L11ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon IPD50P03P4L11ATMA1 P-channel MOSFET, 50 A, 30 V OptiMOS P, 3-Pin DPAK. You can also check on our website or by contacting our customer support team for further order details on Infineon IPD50P03P4L11ATMA1 P-channel MOSFET, 50 A, 30 V OptiMOS P, 3-Pin DPAK.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16889894 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16889894.
Yes. We ship IPD50P03P4L11ATMA1 Internationally to many countries around the world.