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This is N-channel SiC MOSFET 55 A 1200 V 3-Pin TO-247N manufactured by ROHM. The manufacturer part number is SCT3040KLGC11. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 107 nc @ 18 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 165 w maximum power dissipation. It features a maximum gate source voltage of 22 v. The product carries 5.6v of maximum gate threshold voltage. In addition, the height is 21mm. Furthermore, the product is 5mm wide. Its accurate length is 16mm. Whereas its minimum gate threshold voltage includes 2.7v. The package is a sort of to-247n. It consists of 1 elements per chip. While 55 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It provides up to 60 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.
For more information please check the datasheets.
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