Toshiba SSM3J332R,LF(T P-channel MOSFET, 6 A, 30 V, 3-Pin SOT-23F

SSM3J332R-LF-T Toshiba SSM3J332R,LF(T P-channel MOSFET, 6 A, 30 V, 3-Pin SOT-23F
Toshiba

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
8.2 nC @ -4.5 V nC
Maximum Continuous Drain Current:
6 A
Mounting Type:
Surface Mount
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
+12 V
Maximum Gate Threshold Voltage:
1.2V
Channel Type:
P
Width:
1.8mm
Length:
2.9mm
Minimum Gate Threshold Voltage:
0.5V
Package Type:
SOT-23F
Number of Elements per Chip:
1
Transistor Material:
Si
Maximum Drain Source Resistance:
144 mΩ
Height:
0.8mm
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is P-channel MOSFET 6 A 30 V 3-Pin SOT-23F manufactured by Toshiba. The manufacturer part number is SSM3J332R,LF(T. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 8.2 nc @ -4.5 v nc. While 6 a of maximum continuous drain current. The product is available in surface mount configuration. Provides up to 2 w maximum power dissipation. It features a maximum gate source voltage of +12 v. The product carries 1.2v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 1.8mm wide. Its accurate length is 2.9mm. Whereas its minimum gate threshold voltage includes 0.5v. The package is a sort of sot-23f. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It provides up to 144 mω maximum drain source resistance. In addition, the height is 0.8mm. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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SSM3J332R P-channel MOSFET Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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