Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V E Series, 3+Tab-Pin TO-220AB

SIHP065N60E-GE3 Vishay  N-channel MOSFET, 40 A, 600 V E Series, 3+Tab-Pin TO-220AB
SIHP065N60E-GE3
Vishay

Product Information

Maximum Continuous Drain Current:
40 A
Width:
4.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
49 nC @ 10 V
Channel Type:
N
Length:
10.51mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Series:
E Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
15.49mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
65 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 40 A 600 V E Series 3+Tab-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SIHP065N60E-GE3. While 40 a of maximum continuous drain current. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 49 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.49mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 65 mω maximum drain source resistance.

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SiHP065N60E, E Series Power MOSFET N-Channel 650V(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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You will get a confirmation email regarding your order of Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V E Series, 3+Tab-Pin TO-220AB. You can also check on our website or by contacting our customer support team for further order details on Vishay SIHP065N60E-GE3 N-channel MOSFET, 40 A, 600 V E Series, 3+Tab-Pin TO-220AB.
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