Infineon IPG20N06S4L26ATMA1 Dual N-channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON

IPG20N06S4L26ATMA1 Infineon  Dual N-channel MOSFET, 20 A, 60 V OptiMOS, 8-Pin TDSON
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
20 A
Mounting Type:
Surface Mount
Channel Type:
N
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
2
Pin Count:
8
RoHs Compliant
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This is Dual N-channel MOSFET 20 A 60 V OptiMOS 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N06S4L26ATMA1. It has a maximum of 60 v drain source voltage. While 20 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The package is a sort of superso8 5 x 6. It consists of 2 elements per chip. It contains 8 pins.

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Datasheet - IPG20N06S4L26ATMA1(Technical Reference)

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