Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.7mm
Maximum Continuous Drain Current:
5.1 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
58 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.1 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
340 pF@ 25 V
Length:
6.7mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
30 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.8 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Typical Turn-On Delay Time:
7.8 ns
Minimum Operating Temperature:
-55 °C
