Infineon IPB47N10SL26ATMA1 N-channel MOSFET Transistor, 47 A, 100 V SIPMOS, 3-Pin D2PAK

IPB47N10SL26ATMA1 Infineon  N-channel MOSFET Transistor, 47 A, 100 V SIPMOS, 3-Pin D2PAK
IPB47N10SL26ATMA1
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
90 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
175 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2V
Height:
4.4mm
Width:
9.25mm
Length:
10mm
Maximum Drain Source Resistance:
40 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
47 A
Minimum Gate Threshold Voltage:
1.2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
RoHs Compliant
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This is N-channel MOSFET Transistor 47 A 100 V SIPMOS 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB47N10SL26ATMA1. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 90 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 175 w maximum power dissipation. The product sipmos, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2v of maximum gate threshold voltage. In addition, the height is 4.4mm. Furthermore, the product is 9.25mm wide. Its accurate length is 10mm. It provides up to 40 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 47 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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