Category:
Power MOSFET
Dimensions:
3.1 x 2.5 x 0.8mm
Maximum Continuous Drain Current:
11 A
Width:
2.5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.5V
Package Type:
TSMT
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
22 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2410 pF @ 15 V
Length:
3.1mm
Pin Count:
8
Forward Transconductance:
13S
Typical Turn-Off Delay Time:
87 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Series:
RQ7E110AJ
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.8mm
Typical Turn-On Delay Time:
22 ns
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
12.4 mΩ
