Vishay SQ4850EY-T1_GE3 N-channel MOSFET, 12 A, 60 V SQ Rugged, 8-Pin SOIC

SQ4850EY-T1_GE3 Vishay  N-channel MOSFET, 12 A, 60 V SQ Rugged, 8-Pin SOIC
SQ4850EY-T1_GE3
Vishay

Product Information

Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Width:
4mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Length:
5mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
6.8 W
Series:
SQ Rugged
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.55mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
47 mΩ
RoHs Compliant
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This is N-channel MOSFET 12 A 60 V SQ Rugged 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SQ4850EY-T1_GE3. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The package is a sort of soic. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.5v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 20 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 6.8 w maximum power dissipation. The product sq rugged, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.55mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 47 mω maximum drain source resistance.

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SQ4850EY, Automotive N-Channel 60V (D-S) 175degC MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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