Vishay SI7904BDN-T1-GE3 Dual N-channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212

SI7904BDN-T1-GE3 Vishay  Dual N-channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
16 nC @ 8 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
17.8 W
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
1.07mm
Width:
3.15mm
Length:
3.15mm
Minimum Gate Threshold Voltage:
0.45V
Package Type:
PowerPAK 1212
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Maximum Drain Source Resistance:
45 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
RoHs Compliant
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This is Dual N-channel MOSFET 6 A 20 V 8-Pin PowerPAK 1212 manufactured by Vishay. The manufacturer part number is SI7904BDN-T1-GE3. It has a maximum of 20 v drain source voltage. With a typical gate charge at Vgs includes 16 nc @ 8 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 17.8 w maximum power dissipation. It features a maximum gate source voltage of -8 v, +8 v. In addition, the height is 1.07mm. Furthermore, the product is 3.15mm wide. Its accurate length is 3.15mm. Whereas its minimum gate threshold voltage includes 0.45v. The package is a sort of powerpak 1212. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 45 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers isolated transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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Si7904BDN, Dual N-Channel 20V (D-S) MOSFET(Technical Reference)

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