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Infineon IPL65R190E6AUMA1 N-channel MOSFET, 20 A, 700 V CoolMOS E6, 5-Pin VSON

IPL65R190E6AUMA1 Infineon  N-channel MOSFET, 20 A, 700 V CoolMOS E6, 5-Pin VSON
Infineon

Product Information

Maximum Drain Source Voltage:
700 V
Typical Gate Charge @ Vgs:
73 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
151 W
Series:
CoolMOS E6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
1.1mm
Width:
8.1mm
Length:
8.1mm
Maximum Drain Source Resistance:
190 mΩ
Package Type:
VSON
Number of Elements per Chip:
1
Minimum Operating Temperature:
-40 °C
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Forward Diode Voltage:
0.9V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
5
Transistor Configuration:
Single
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This is N-channel MOSFET 20 A 700 V CoolMOS E6 5-Pin VSON manufactured by Infineon. The manufacturer part number is IPL65R190E6AUMA1. It has a maximum of 700 v drain source voltage. With a typical gate charge at Vgs includes 73 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 151 w maximum power dissipation. The product coolmos e6, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 1.1mm. Furthermore, the product is 8.1mm wide. Its accurate length is 8.1mm. It provides up to 190 mω maximum drain source resistance. The package is a sort of vson. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -40 °c. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 0.9v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 5 pins. The product offers single transistor configuration.

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IPL65R190E6 CoolMOS E6 Power Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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