Category:
Power MOSFET
Dimensions:
3.15 x 3.15 x 0.8mm
Maximum Continuous Drain Current:
37 A
Transistor Material:
Si
Width:
3.15mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.3V
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
28 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1462 pF @ 25 V
Length:
3.15mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.7 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
15 mΩ
