Maximum Continuous Drain Current:
220 mA, 400 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Maximum Drain Source Resistance:
2.8 Ω, 7.8 Ω
Package Type:
SOT-666
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Channel Type:
N, P
Length:
1.7mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-8 V, +8 V
Height:
0.6mm
Minimum Operating Temperature:
-55 °C
