Category:
Power MOSFET
Dimensions:
10.65 x 4.9 x 16.15mm
Maximum Continuous Drain Current:
13.8 A
Transistor Material:
Si
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Drain Source Resistance:
280 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
43 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
950 pF @ 100 V
Length:
10.65mm
Pin Count:
3
Typical Turn-Off Delay Time:
100 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
32 W
Series:
CoolMOS C6
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
16.15mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
0.9V
