Toshiba TK4R3E06PL N-channel MOSFET, 80 A, 60 V, 3-Pin TO-220

TK4R3E06PL Toshiba  N-channel MOSFET, 80 A, 60 V, 3-Pin TO-220
Toshiba

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
48.2 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
87 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
2.5V
Channel Type:
N
Width:
15.1mm
Length:
10.16mm
Maximum Drain Source Resistance:
7.2 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
80 A
Minimum Gate Threshold Voltage:
1.5V
Forward Diode Voltage:
1.5V
Height:
4.45mm
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
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This is N-channel MOSFET 80 A 60 V 3-Pin TO-220 manufactured by Toshiba. The manufacturer part number is TK4R3E06PL. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 48.2 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 87 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. The product carries 2.5v of maximum gate threshold voltage. The product is available in [Cannel Type] channel. Furthermore, the product is 15.1mm wide. Its accurate length is 10.16mm. It provides up to 7.2 mω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 80 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1.5v. Its forward diode voltage is 1.5v . In addition, the height is 4.45mm. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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FAQs

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