Nexperia PSMN8R5-60YS,115 N-channel MOSFET, 76 A, 60 V, 4 + Tab-Pin LFPAK

PSMN8R5-60YS-115 Nexperia PSMN8R5-60YS,115 N-channel MOSFET, 76 A, 60 V, 4 + Tab-Pin LFPAK
Nexperia

Product Information

Maximum Drain Source Voltage:
60 V
Typical Gate Charge @ Vgs:
39 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
106 W
Maximum Gate Source Voltage:
20 V
Maximum Gate Threshold Voltage:
3.8V
Height:
1.05mm
Width:
4.1mm
Length:
5mm
Maximum Drain Source Resistance:
18.4 mΩ
Package Type:
LFPAK, SOT-669
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
76 A
Minimum Gate Threshold Voltage:
2V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
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This is N-channel MOSFET 76 A 60 V 4 + Tab-Pin LFPAK manufactured by Nexperia. The manufacturer part number is PSMN8R5-60YS,115. It has a maximum of 60 v drain source voltage. With a typical gate charge at Vgs includes 39 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 106 w maximum power dissipation. It features a maximum gate source voltage of 20 v. The product carries 3.8v of maximum gate threshold voltage. In addition, the height is 1.05mm. Furthermore, the product is 4.1mm wide. Its accurate length is 5mm. It provides up to 18.4 mω maximum drain source resistance. The package is a sort of lfpak, sot-669. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 76 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 2v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 4 pins. The product offers single transistor configuration.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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