Nexperia PSMN8R0-40PS,127 N-channel MOSFET, 77 A, 40 V, 3-Pin TO-220AB

PSMN8R0-40PS-127 Nexperia PSMN8R0-40PS,127 N-channel MOSFET, 77 A, 40 V, 3-Pin TO-220AB
PSMN8R0-40PS,127
Nexperia

Product Information

Dimensions:
10.3 x 4.7 x 16mm
Maximum Continuous Drain Current:
77 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
PRICED TO CLEAR:
Yes
Typical Gate Charge @ Vgs:
21 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1262 pF @ 12 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
86 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.6 mΩ
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 77 A 40 V 3-Pin TO-220AB manufactured by Nexperia. The manufacturer part number is PSMN8R0-40PS,127. The given dimensions of the product include 10.3 x 4.7 x 16mm. While 77 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. It has a priced to clear feature yes . With a typical gate charge at Vgs includes 21 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1262 pf @ 12 v . Its accurate length is 10.3mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 21 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 86 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 16mm. In addition, it has a typical 12 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.6 mω maximum drain source resistance.

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PSMN8R0-40PS, N-channel 40V, 7.6mΩ standard level MOSFET Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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